Beskrivelse
G30N60A4 IGBT Transistors 600 V N-Channel, TO247/3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications.
– Mounting Style:Through Hole
– Configuration: Single
– Collector- Emitter Voltage VCEO Max: 600 V
– Collector-Emitter Saturation Voltage: 1.8 V
– Maximum Gate Emitter Voltage: /- 20 V
– Continuous Collector Current at 25 C: 75 A
– Power Dissipation: 463 W
– Minimum Operating Temperature:- 55 C
– Maximum Operating Temperature: 150 C
– Continuous Collector Current Ic Max: 75 A
