Beskrivelse
BUK653R2-55C, N-channel Trench MOS intermediate level FET for 12 V and 24 V Automotive systems, electric and electro-hydraulic power steering, motors, lamps and solenoid control
– Transistor Polarity: N Channel
– Continuous Drain Current Id: 120 A
– Drain Source Voltage Vds: 55 V
– On Resistance Rds(on): 0.0027ohm
– Rds(on) Test Voltage Vgs: 10V
– Threshold Voltage Vgs: 2.3V
– Power Dissipation Pd: 306W
– Transistor Case Style: TO-220AB
– No. of Pins: 3 Pins
– Operating Temperature Max: 175°C
