Beskrivelse
STP60NF10, MOSFET N Ch 100 Volt 80 A transistor realized with ST Microelectronics STripFET™ process has specifically been designed to minimize input capacitance and gate charge.
– Package/Case: TO-220-3
– Number of Channels: 1 Channel
– Transistor Polarity: N-Channel
– Vds – Drain-Source Breakdown Voltage: 100 V
– Id – Continuous Drain Current: 80 A
– Rds On – Drain-Source Resistance:23 mOhms
– ate-Source Voltage: 20 V
– Minimum Temperature: – 55 C
– Maximum Temperature: 175 C
– Configuration: Single
– Power Dissipation: 300 W
