Beskrivelse
The HGTG18N120BN transistor is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors.
– Producer : FAIRCHILD SEMICONDUCTOR
– 54A, 1200V, T C= 25oC
– 1200V Switching SOA Capability
– Typical Fall Time.. 140ns at TJ= 150 *C
– Case : TO-247
– Short Circuit Rating
-Low Conduction Loss
– Avalanche Rated
