Description
20N60S5 MOSFET Transistor N-Ch 600 V 20 A TO247 – 3.
– Number of Channels: 1 Channel
– Transistor Polarity: N-Channel
– Vds – Drain-Source Breakdown Voltage: 600 V
– Id – Continuous Drain Current: 20 A
– Rds On – Drain-Source Resistance: 190 mOhms
– Vgs – Gate-Source Voltage: 20 V
– Minimum Temperature: – 55 C
– Maximum Temperature: 150 C
– Power : 208 W
