Description
BS250 Transistor P-Channel 60-V (D-S) MOSFET.
– Drain-source voltage −VDSmax.: 45 V
– Gate-source voltage: 20 V
– Drain current (DC)−IDmax. 0.25 A
– Drain current (peak value)−IDMmax. 0.5 A
– Total power dissipation up to Tamb= 25°C (note 1) Ptot max. 0.83 W
– Storage temperature range Tstg−65 to 150°C
– Junction temperature Tjmax. 150°