Beskrivelse
IRFB4410Z N-Kanal, MOSFET, 97 A 100 V for high Efficiency Synchronous Rectification in SMPS, uninterruptible Power Supply, High Speed Power Switching.
– Channel type N
– Drain current continuous max: 97 A
– Drain source voltage max. 100 V
– Drain source resistance max 0.009 Ω
– Gate source voltage max -20 V, 20 V
– Enclosure type TO-220
– Mounting type Hole mounting
– Transistor Configuration Simple
– Number of legs 3
– Channel Shape Enhancement
– Category Power MOSFET
– Power dissipation max. 230 W
– Forward transconductance: 140 S
– Forward voltage for diode: 1.3 V
