Description
IRG4BC20S IGBT Transistors 600V DC-1kHz, TO-220-3.
– Technology: Si
– Case:TO-220-3
– Mounting Style:Through Hole
– Collector- Emitter Voltage VCEO Max: 600 V
– Collector-Emitter Saturation Voltage: 1.4 V
– Maximum Gate Emitter Voltage: – 20 V
– Continuous Collector Current at 25 C:19 A
– Power Dissipation: 60 W
– Minimum Operating Temperature:- 55 C
– Maximum Operating Temperature: 150 C
