Description
SGP23N60UFTU IGBT transistor, 600 V, 12 A provide low conduction and switching losses. UF series is designed for the applications such as general inverters and PFC where High Speed Switching is required feature.
– Type: G23E14 AD N60 UF
– 12 A, 600 V, TC = 100°C
– Collector current continuous max. 23 A
– Collector emitter voltage max. 600 V
– Gate emitter voltage max. ±20V
– Power dissipation max. 100 W
– Enclosure type TO-220
– Mounting type Hole mounting
– Channel type N
– Number of legs 3
– Switching speed 1MHz
