Beskrivelse
STB30NF10T4 N-Kanal, MOSFET transistor, 35 A 100 V, SMD
– Drain current continuous max. 35 A
– Drain source voltage max. 100 V
– Drain source resistor max. 0.045 Ω
– Max. threshold voltage for port 4V
– Minimum threshold voltage for port 2V
– Gate source voltage max. ± 20 V
– Enclosure Type D2PAK
– Mounting Type Surface Mount
Benantal 3
Channel Form Enhancement
Category Effect MOSFET
Power consumption max. 115000 mW
Configuration Single, On-delay time typically 15 ns
Number of items per chip 1, Width 9.35mm
Turn off delay time typically 45 ns
Dimensions 10.4 x 9.35 x 4.6mm
Operating temperature max. 175 ° C
Input capacity at Vds typically 1180 pF at 25 V
Gate charge at Vgs typically 40 nC at 10 V
Operating temperature min. -55 ° C
