Beskrivelse
STP10NK80ZFP N-Kanal, MOSFET, 9 A 800 V, TO-220FP are N-channel Zener protected Power MOSFETs developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
– Channel type N
– Drain current continuous max 9 A
– Drain source voltage max. 800 V
– Drain source resistance max. 900 mΩ
– Max. threshold voltage for port 4.5V
– Minimum threshold voltage for port 3V
– Gate source voltage max -30 V, 30 V
– Enclosure type TO-220FP
– Mounting type Hole mounting
– Transistor Configuration Simple
– Number of legs 3
– Power dissipation max. 40 W
– Number of elements per chip 1
– Operating temperature min. -55 °C
– Gate-ladning ved Vgs typisk 72 nC ved 10 V
