Description
STP35NF10 MOSFET N-CHANNEL 100V, 0.030 Ω, 40A, TO-22 realized with STMicro-electronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application.
– Polarity N-Channel
– Technology MOSFET
– Drain-Source Breakdown Voltage 100V
– Continuous Drain Current at 25°C 40A (Tc)
– Drive Voltage (Max Rds On, Min Rds On) 10V
– Gate-Source Threshold Voltage 4V @ 250μA
– Max Gate Charge 55nC @ 10V
– Max Input Capacitance 1550pF @ 25V
– Maximum Gate-Source Voltage ±20V
– Power Dissipation (Max) 115W (Tc)
– Maximum Rds On at Id,Vgs 35 mOhm @ 17.5A, 10V
– Temperature Range – Operating -55°C to 175°C (TJ)
– Mounting Through Hole
– Case / Package TO-220AB
